Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A), L639-641
- https://doi.org/10.1143/jjap.22.l639
Abstract
The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy has been investigated over a range of substrate temperature from 500°C to 700°C. Low temperature photoluminescence from single quantum wells less than 150Å in width has been observed at low excitation levels. Evidence of a graded heterostructure interface was observed in samples grown at higher substrate temperatures.Keywords
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