High light output-power single-longitudinal-mode semiconductor laser diodes
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 3 (6), 1202-1210
- https://doi.org/10.1109/jlt.1985.1074335
Abstract
Issues related to realizing high light output-power single-longitudinal-mode InGaAsP/InP DFB LD's have been studied experimentally and theoretically. Asymmetry in the reflections as the front and rear facets of DFB cavity has been found to result in enhanced single-longitudinal-mode selectivity and higher light output power from the front facet. Single-longitudinal-mode CW light output power as high as 103 mW has been obtained in a 1.3-μm DFB-DC-PBH LD with facet reflectivities of 2 and 80-90 percent. Low internal quantum efficiency is pointed out to be an important problem for 1.5-μm LD's.Keywords
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