Nitrogen activation for plasma chemical synthesis of thin Si3N4 films
- 15 April 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 102 (2), 107-110
- https://doi.org/10.1016/0040-6090(83)90142-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Differences between microwave and RF activation of nitrogen for the PECVD processJournal of Physics D: Applied Physics, 1982
- Characterization of plasma-deposited silicon nitride filmsJournal of Applied Physics, 1980
- Preparation of Nitrides by Active Nitrogen: II .Journal of the Electrochemical Society, 1977
- Chemical vapour deposition promoted by r.f. dischargeSolid-State Electronics, 1965
- Active Nitrogen.Chemical Reviews, 1963