Differences between ruby and Nd:YAG laser annealing of ion implanted silicon
- 22 January 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 69 (6), 436-438
- https://doi.org/10.1016/0375-9601(79)90400-6
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Amorphous thickness dependence in the transition to single crystal induced by laser pulsePhysics Letters A, 1978
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978