InP islands on InGaP/GaAs(001): island separation distributions
- 10 December 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 393 (1-3), 24-33
- https://doi.org/10.1016/s0039-6028(97)00231-8
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Characterization of InP islands on
InGaP GaAs (001)Surface Science, 1995 - In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal SurfaceJapanese Journal of Applied Physics, 1995
- Characterization of MOCVD-grown InP on
InGaP GaAs (001)Surface Science, 1995 - Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Strain relaxation by coherent three-dimensional islanding in molecular-beam epitaxy of EuTe on PbTe(111)Physical Review B, 1993
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990