Trap structure of pyrolytic Al2O3 in MOS capacitors
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (3), 106-107
- https://doi.org/10.1063/1.1654568
Abstract
The trap structure of the pyrolytic Al2O3 layer of MOS capacitors was investigated by a technique in which the capacitor was used as an integral detector of the charge trapped in the oxide. In all the samples studied, five trap levels were found to exist extending from 2.2 to 4.5 eV below the oxide conduction band. The spatial distribution of these traps was inferred from complementary photoconductivity measurements. This method is applicable to the study of the effects of radiation damage and ion implantation on the trap structure of this and other thin film insulators.Keywords
This publication has 6 references indexed in Scilit:
- Internal Photoemission Measurements in a Metal-Al2O3–Si SystemJournal of Applied Physics, 1971
- Spectrally resolved photo depopulation of electron trapping defects in amorphous silica filmsSolid State Communications, 1970
- MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinelSolid-State Electronics, 1970
- Color Centers and Radiation-Induced Defects inPhysical Review B, 1961
- Radiation effects in fused silica and α-Al2O3Discussions of the Faraday Society, 1961
- The anisotropy of optical absorption induced in sapphire by neutron and electron irradiationPhilosophical Magazine, 1960