Internal Photoemission Measurements in a Metal-Al2O3–Si System

Abstract

The photoelectric threshold energies for electron photoemission from Al, Au, and Si into a thin layer of Al₂O₃, deposited on Si by pyrolysis of AlCl₃ at 850°C, have been measured and found to be, respectively, 3.05±0.1, 4.0±0.1, and 4.1±0.1 eV (from Si valence band). No hole photocurrent, as reported for plasma‐anodization‐grown Al₂O₃, was detectable. An approximate energy‐band diagram of the Al–Al₂O₃–Si system is presented.