Properties of Silicon Doped with Manganese

Abstract

Manganese acts as a donor impurity in silicon, introducing a level 0.53±0.03 ev from the conduction band. The distribution coefficient of manganese in silicon is ∼${10}^{-5\mathrm{}}$ as determined by radioactive tracer techniques and checked by electrical measurements. Precipitation limits the electrically active manganese to 5×${10}^{14}$ ${\mathrm{cm}}^{-3\mathrm{}}$ in crystals grown from a melt by the Czochralski technique. Higher concentrations can be obtained by diffusing in manganese at 1200°C and quenching. Manganese introduces recombination centers into a crystal with observable effects at the ${10}^{12}$ ${\mathrm{cm}}^{-3\mathrm{}}$ concentration in the crystals. Studies of Hall mobility under external radiation and lifetime studies by the photoconductive decay method show the presence of electron traps. Heating to only 200-300°C causes the precipitation of the manganese and loss of electrical activity.