Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11R)
- https://doi.org/10.1143/jjap.28.2197
Abstract
We examined the effects of the deposition sequence on the threshold voltage and field-effect mobility in amorphous silicon thin-film transistors. When the nitrides are deposited after the a-Si:H(normal), the threshold voltages become more positive, and the field-effect mobilities are lower than with the inverted sequence. Photoluminescence measurements reveal that the tail states in the a-Si:H near the a-Si:H/a-SiN x interface for the normal sequence are wider than for the inverted sequence.Keywords
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