Negative photoconductivity in high electron mobility transistors
- 28 December 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (26), 2233-2235
- https://doi.org/10.1063/1.98950
Abstract
High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current-voltage characteristics were enhanced by shining white light onto the devices showing negative photoconductivity.Keywords
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