Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy
- 1 March 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (2), 281-308
- https://doi.org/10.1007/bf02656681
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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