Hall-effect depletion corrections in ion-implanted samples: Si29 in GaAs

Abstract

The sheet free‐carrier concentration in a thin, conducting layer on an insulating substrate is lower than the net, sheet‐dopant concentration because of free‐carrier depletion in the surface and interface regions. Here we develop an algorithm to give the true, net sheet‐donor concentration from the measured sheet‐Hall concentration under the assumption of a Gaussian donor profile, which is usually sufficiently accurate for ion‐implanted samples. Correction curves are generated for Si²⁹ ions implanted into GaAs at energies of 60, 100, 130, 150, and 200 keV, and at doses of 1×10¹¹–2×10¹⁴ ions/cm². Also, the Hall mobilities and r factors are calculated at various carrier concentrations for N_A/N_D=0 and N_A/N_D=0.5.