Submicron Single-Gate and Dual-Gate GaAs MESFET's with Improved Low Noise and High Gain Performance
- 1 June 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 24 (6), 300-305
- https://doi.org/10.1109/tmtt.1976.1128846
Abstract
No abstract availableKeywords
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