Influence of Electronic Lifetime on the Lattice Instability ofSi
- 7 January 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 32 (1), 9-12
- https://doi.org/10.1103/physrevlett.32.9
Abstract
The magnetic field dependence of the structural transformation temperature of a single crystal of Si has been measured up to 156 kOe. Quantitative agreement with the Weger-Labbé-Friedel model is obtained with appropriate band parameters and a density of states that accounts for finite lifetimes of the electrons.
Keywords
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