94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (12), 585-587
- https://doi.org/10.1109/55.63047
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Ultra-low-noise millimeter-wave pseudomorphic HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultralow-noise W-band pseudomorphic InGaAs HEMT'sIEEE Electron Device Letters, 1990
- W-band InGaAs HEMT low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTsIEEE Transactions on Electron Devices, 1989
- 94 GHz low-noise HEMTElectronics Letters, 1989
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979