Ultralow-noise W-band pseudomorphic InGaAs HEMT's
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (7), 303-305
- https://doi.org/10.1109/55.56482
Abstract
Low-noise planar doped pseudomorphic (PM) InGaAs high-electron-mobility transistors (HEMTs) with a gate length of 0.1 mu m for W-band operation are discussed. These devices feature a multiple-finger layout with air bridges interconnecting the sources to reduce gate resistance. The device exhibits a minimum noise figure of 2.5 dB with an associated gain of 4.7 dB at 92.5 GHz. This result demonstrates the feasibility of using PM InGaAs HEMTs for W-band low-noise receivers without the need for using lattice-matched InP HEMTs.<>Keywords
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