A Two Level Model for Lifetime Reduction Processes in Neutron Irradiated Silicon and Germanium
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 14 (6), 88-102
- https://doi.org/10.1109/TNS.1967.4324780
Abstract
A two level mnodel for recombination processes in neutron irradiated silicon and germanium is proposed. This model successfully explains published experimental data for lifetime and. life-time damage constant as a function of resistivity, injection level and, temperature.Keywords
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