Explanation for the Discrepancy in Recombination Level Positions in Irradiated n-Type Ge Reported by Various Observers
- 1 June 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (6), 2094-2095
- https://doi.org/10.1063/1.1714423
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Radiation-Induced Recombination and Trapping Centers in Germanium. I. The Nature of the Recombination ProcessPhysical Review B, 1961
- Effect of Reactor Fast Neutrons on Electron-Hole Recombination in GermaniumJournal of Applied Physics, 1961
- Centres de Recombinaison Crees dans le Ge par des Neutrons Rapides†Journal of Electronics and Control, 1959
- Electron-Bombardment Induced Recombination Centers in GermaniumJournal of Applied Physics, 1959
- The Effects of Neutron Irradiation on Germanium and SiliconProceedings of the IRE, 1958
- Effect of Irradiation on the Hole Lifetime of N-Type GermaniumJournal of Applied Physics, 1957