Radiative and non-radiative tunnelling in glow-discharge and sputtered amorphous silicon
- 1 May 1979
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 39 (5), 389-403
- https://doi.org/10.1080/13642817908245810
Abstract
Photoluminescence decay measurements are reported for doped and undoped glow-discharge a-Si, and for a-Si prepared by sputtering in a hydrogenated atmo-sphere. It is concluded that a distribution of radiative lifetimes is present, due either to non-crystalline disorder or to a donor-acceptor pair mechanism. The main competitive mechanism is tunnelling to defects.Keywords
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