Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5), L378
- https://doi.org/10.1143/jjap.20.l378
Abstract
Room-temperature mobility of two-dimensional electron gas accumulating at a heterojunction interface in selectively doped GaAs/N-AlGaAs grown by MBE was shown to be potentially as high as 8,600 cm2/Vs with a sheet electron concentration of 5.5×1011 cm-2. This is almost twice as high as the mobility in conventional GaAs FETs with typical carrier concentrations.Keywords
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