Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4), L245-248
- https://doi.org/10.1143/jjap.20.l245
Abstract
Selectively Si-doped GaAs/N-AlGaAs heterojunction structures have been grown by MBE. Two-dimensional electron gas accumulating at the interface of the heterojunction showed mobilities as high as 69,000 cm2/Vs at 77 K and 100,000 cm2/Vs at 4.2 K, with a sheet electron concentration of 5.5×1011 cm-2, which are higher than any reported so far. An enhancementmode high electron mobility transistor (E-HEMT), which was first fabricated from the heterojunction material, showed a field effect mobility of 49,300 cm2/Vs at 77 K, suggesting that this heterojunction material has potential for application to low-power, high-speed integrated circuits.Keywords
This publication has 9 references indexed in Scilit:
- High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interfaceApplied Physics Letters, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980
- Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Two-dimensional electron gas m.e.s.f.e.t. structureElectronics Letters, 1980
- Two-dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interfaceJournal of Vacuum Science and Technology, 1979
- Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctionsApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978