7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain
- 2 September 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (10), 1106-1109
- https://doi.org/10.1103/physrevlett.55.1106
Abstract
We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from . The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.
Keywords
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