Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition

Abstract

Successful fabrication of thin GaAs quantum wires (120–200 Å)×(200–300 Å) by a novel metal‐organic chemical‐vapor‐deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO₂ masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.