Strain effects in InGaAs/HaAs superlattices
- 31 March 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 61 (12), 825-826
- https://doi.org/10.1016/0038-1098(87)90487-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief reviewSolid-State Electronics, 1986
- Hall-effect measurements in p-type InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1986
- Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresJournal of the Optical Society of America B, 1985
- Photoluminescence of InxGa1-xAs-GaAs strained-layer superlatticesJournal of Electronic Materials, 1985
- Light-hole conduction in InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Optical studies of InxGa1−xAs-GaAs strained multiquantum well structuresApplied Physics Letters, 1983
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Continuous 300-K laser operation of strained superlatticesApplied Physics Letters, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978