Determination of Optical Energy Gaps from Surface Photovoltage Measurements
- 1 May 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (5), 2265-2268
- https://doi.org/10.1063/1.1661489
Abstract
The spectral photovoltaic response of surface barrier MOS diodes is shown to yield information about the charge carrier dependence and the temperature dependence of the fundamental optical band gaps of pure and doped bulk crystalline and thin‐film semiconductors with specific reference to InSb.Keywords
This publication has 13 references indexed in Scilit:
- Theory of the small-signal photovoltage at semiconductor surfacesSurface Science, 1967
- InSb MOS INFRARED DETECTORApplied Physics Letters, 1967
- Conduction Band Minima in AlAs and AlSbPhysical Review Letters, 1963
- A Method for the Measurement of Short Minority Carrier Diffusion Lengths in SemiconductorsJournal of Applied Physics, 1961
- Optical Properties of-Type Indium Arsenide in the Fundamental Absorption Edge RegionPhysical Review B, 1961
- L'effet photovoltaique de surface dans le silicium et son application à la mesure de la durée de vie des porteurs minoritairesJournal de Physique et le Radium, 1960
- Measurement of Minority Carrier Lifetimes with the Surface PhotovoltageJournal of Applied Physics, 1957
- XIII. Photovoltaic and Photoconductive Theory Applied to InSbJournal of Electronics and Control, 1955
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954
- Optical Properties of Indium AntimonidePhysical Review B, 1953