InSb MOS INFRARED DETECTOR

Abstract

Infrared photovoltaic response and high quantum efficiency have been observed in a large‐area InSb, metal‐oxide‐semiconductor structure. Spectral measurements indicate that the response is due to the generation of electron‐hole pairs in a depletion region of the n‐type InSb at the InSb‐oxide interface. Pulsed current measurements yield a clear diode characteristic and the overall results are equivalent to what one would expect to obtain from a photodiode in series with a MOS capacitor.