Ultraviolet light-emitting diode of a cubic boron nitride p n junction made at high pressure
- 12 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (11), 962-964
- https://doi.org/10.1063/1.100082
Abstract
Injection luminescence in the ultraviolet is observed from a cubic boron nitride pn junction diode made at high pressure. Microscopic observation and spectroscopic studies show that the light emission occurs near the junction region only in the forward‐bias condition. The spectra extend from ∼215 nm to the red, having a few peaks mainly in the ultraviolet.Keywords
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