High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films
- 14 December 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (24), 2028-2030
- https://doi.org/10.1063/1.98282
Abstract
Depletion-mode n-channel metal-oxide-semiconductor field-effect transistors were fabricated on n-type β-SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α-SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.Keywords
This publication has 10 references indexed in Scilit:
- Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor depositionApplied Physics Letters, 1987
- Transmission electron microscopy of process-induced defects in β-SiC thin filmsJournal of Materials Research, 1986
- Theoretical and Empirical Studies of Impurity Incorporation into β ‐ SiC Thin Films during Epitaxial GrowthJournal of the Electrochemical Society, 1986
- Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor depositionApplied Physics Letters, 1986
- Behavior of inversion layers in 3C silicon carbideApplied Physics Letters, 1986
- Experimental 3C-SiC MOSFETIEEE Electron Device Letters, 1986
- Schottky barrier diodes on 3C-SiCApplied Physics Letters, 1985
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiCJapanese Journal of Applied Physics, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983