High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer
- 12 May 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (20), 203505
- https://doi.org/10.1063/1.1931833
Abstract
A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors(TFTs), both in bottom contact and top contact configuration. A PMMA buffer layer allows to reduce the interaction between a π -conjugated system of pentacene and the metal or dielectric substrate. We show that a thin PMMA buffer layer improves crystal quality along the metal contacts’ boundaries, while still allowing good ohmic contact. Pentacene TFTs, including a PMMA buffer layer, show very high field-effect mobility, μ FE = 0.65 and 1.4 cm 2 ∕ V s , for bottom and top contact configuration, respectively, and remarkable steep subthreshold region.Keywords
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