Acceptor compensation mechanism by midgap defects in nitrogen-doped ZnSe films
- 5 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6), 671-673
- https://doi.org/10.1063/1.105360
Abstract
A new carrier compensation mechanism has been investigated in nitrogen‐doped ZnSe films grown by low‐pressure metalorganic vapor phase epitaxy. Photoconduction spectrum measurements have revealed the existence of deep defect levels located just above the center of the band gap in N‐doped, highly compensated films. These results combined with photo‐Hall measurements (under infrared illumination) have revealed that these midgap defect levels act as deep donors, and play an important role in carrier compensation in shallow acceptor doped ZnSe films.Keywords
This publication has 9 references indexed in Scilit:
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- ZnSe light-emitting diodesApplied Physics Letters, 1990
- High concentration nitrogen doping in MOVPE grown ZnSeJournal of Crystal Growth, 1990
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Iodine-doped low-resistivity n-type ZnSe films grown by MOVPEJournal of Crystal Growth, 1988
- Nitrogen-doped p-type ZnSe films grown by MOVPEJournal of Crystal Growth, 1988
- Superiority of group VII elements over group III elements as donor dopants in MOCVD ZnSeJournal of Crystal Growth, 1988
- Preparation of low-resistivity n-type ZnSe by organometallic chemical vapor depositionApplied Physics Letters, 1981
- Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental ParametersPhysical Review B, 1964