Preparation of low-resistivity n-type ZnSe by organometallic chemical vapor deposition

Abstract

Low‐resistivity n‐type ZnSe with pn≳10¹⁷ cm⁻³ has been grown epitaxially on (100) GaAs substrates by a low‐pressure low‐temperature organometallic chemical vapor deposition process. Triethylaluminum is used as a dopant. The as‐grown layers show a strong near‐band‐gap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other methods.