Directional reactive ion etching at oblique angles

Abstract

Directional reactive ion etching (RIE) at oblique angles is possible using a simple grid‐covered structure (Faraday cage) in conventional parallel‐plate sputter etching equipment. Oblique‐angle etching, as is possible in any ion‐beam system, has been demonstrated using the etchant ions from CHF₃ gas on a fused‐silica substrate. The first detailed measurements of the angular etch dependence of RIE show a strong similarity to those of an ion‐beam system (no chemical etching).