In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy
- 5 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (23), 2311-2313
- https://doi.org/10.1063/1.100263
Abstract
We report on the first In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on a GaAs substrate. In order to suppress the propagation of threading dislocations to the surface, a ten‐period AlAs/In0.52Al0.48As (20 Å/20 Å) strained‐layer superlattice was repeated twice with intervening undoped In0.52Al0.48As layers. The typical common emitter current gain in 50×50 μm2 emitter area devices was 50, with a maximum of 63, at a collector current density of 2×103 A/cm2.Keywords
This publication has 14 references indexed in Scilit:
- In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-heterojunction p-n-p bipolar transistors grown by molecular beam epitaxyIEEE Electron Device Letters, 1988
- A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n/sup +/-InAs cap layer on InP(n) grown by molecular beam epitaxyIEEE Electron Device Letters, 1988
- High-speed performance of InP/In0.53Ga0.47As/InP double-heterojunction bipolar transistorsApplied Physics Letters, 1988
- Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layerIEEE Transactions on Electron Devices, 1988
- Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuitsIEEE Transactions on Electron Devices, 1987
- IVA-6 a novel AlGaAs/GaAs HBT structure for near-ballistic collectionIEEE Transactions on Electron Devices, 1987
- In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistorsIEEE Electron Device Letters, 1986
- InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus ICcharacteristicIEEE Electron Device Letters, 1986
- Heterojunction bipolar transistor using pseudomorphic GaInAs for the baseApplied Physics Letters, 1986
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977