Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnO
- 10 November 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (19), 4032-4034
- https://doi.org/10.1063/1.1625787
Abstract
We report fabrication of homostructural ZnO p–n junctions that contain arsenic (As)-doped ZnO (ZnO:As) and intrinsic n-type ZnO layers. We also describe the metallization process for forming ohmic contacts to p-type ZnO.ZnOfilms were synthesized on n-type SiC substrates by hybrid beam deposition. Ni/Au metal contacts show linear I–V characteristics indicative of ohmic behavior, while other metal contacts (e.g., In/Au and Ti/Au) show nonlinear characteristics with rectification that reveal the presence of Schottky barriers. The characteristics for p–n junctions composed of ZnO layers are confirmed by I–V measurements.Keywords
This publication has 6 references indexed in Scilit:
- Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopantApplied Physics Letters, 2003
- Properties of arsenic-doped p-type ZnO grown by hybrid beam depositionApplied Physics Letters, 2003
- Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxyApplied Physics Letters, 2002
- Fabrication of homostructural ZnO p–n junctionsJournal of Crystal Growth, 2000
- Synthesis of p-type ZnO filmsJournal of Crystal Growth, 2000
- Metal Schottky barrier contacts to alpha 6H-SiCJournal of Applied Physics, 1992