Observation of short-range oxygen migration and oxygen exchange during low temperature plasma anodization of silicon through thin ZrO2 films
- 1 September 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 95 (4), 309-314
- https://doi.org/10.1016/0040-6090(82)90036-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Optically enhanced oxidation of semiconductorsJournal of Vacuum Science and Technology, 1981
- Enhanced plasma oxidation at low temperature using a thin solid electrolyte filmApplied Physics Letters, 1981
- Selective anodic oxidation of silicon in oxygen plasmaIEEE Transactions on Electron Devices, 1980
- An 18O study of the thermal oxidation of silicon in oxygenApplied Physics Letters, 1979
- Ion Desorption by Core-Hole Auger DecayPhysical Review Letters, 1978
- Multipurpose plasma reactor for materials research and processingJournal of Vacuum Science and Technology, 1977
- Parametrically Induced Nonlinear Wave-Particle Scattering and Plasma Heating near the Lower Hybrid FrequencyPhysical Review Letters, 1974
- Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de GraaffNuclear Instruments and Methods, 1971
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965