An 18O study of the thermal oxidation of silicon in oxygen
- 15 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (4), 254-256
- https://doi.org/10.1063/1.90771
Abstract
The mechanism of thermal oxidation of silicon in dry oxygen was studied using 18O as the tracer. SiO2 layers first grown in natural oxygen (1300–3000 Å) were further grown in highly 18O‐enriched oxygen for 8.5 h at 930 °C. 18O profiling was carried out using the 629‐keV narrow resonance in the nuclear reaction 18O(p,α) 15N. The resulting SiO2 films consist of two 18O‐rich layers, 7% near the SiO2 surface and 93% near the Si‐SiO2 interface, while the bulk 18O concentration is very low. The results suggest that the oxide grows mainly through long‐range migration of oxygen, favoring models based on the transport of molecular oxygen.Keywords
This publication has 9 references indexed in Scilit:
- Silicon Oxidation Studies: Some Aspects of the Initial Oxidation RegimeJournal of the Electrochemical Society, 1978
- A revised model for the oxidation of Si by oxygenApplied Physics Letters, 1978
- Precision absolute thin film standard reference targets for nuclear reaction microanalysis of oxygen isotopes: Part II: 18O and 17O standardsNuclear Instruments and Methods, 1978
- Precision absolute thin film standard reference targets for nuclear reaction microanalysis of oxygen isotopes: Part I: 16O standardsNuclear Instruments and Methods, 1978
- Silicon Oxidation Studies: The Role of H 2 OJournal of the Electrochemical Society, 1977
- Molecular diffusion and solubility of hydrogen isotopes in vitreous silicaJournal of Applied Physics, 1977
- Microanalysis of the stable isotopes of oxygen by means of nuclear reactionsAnalytical Chemistry, 1967
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- The mechanism of anodic oxidationJournal of Physics and Chemistry of Solids, 1962