GaAs MESFET device dependences on ion-implant tilt and rotation angles
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (3), 139-041
- https://doi.org/10.1109/55.2068
Abstract
Lightly Cr-doped liquid-encapsulated Czochralski (LEC) GaAs wafers were implanted with 5*10/sup 12/ 100-keV Si/sup 29/ ions/cm/sup 2/ at tilt angles between 0 and 13 degrees and at rotation angles between 0 and 45 degrees C. Capacitance-voltage measurements were then made to determine electron profiles. It was found that cross-wafer device uniformity can be improved using implant tilt angles greater than 9 degrees . For microwave MESFET devices, the maximum transconductances at low I/sub DS/ are achieved using tilt angles greater than 6 degrees and rotation angles greater than 30 degrees .Keywords
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