Channeling effect for low energy ion implantation in Si
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 265-272
- https://doi.org/10.1016/0168-583x(85)90564-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Channeling effect of low energy boron implant inIEEE Electron Device Letters, 1983
- The origin of non-Gaussian profiles in phosphorus-implanted siliconJournal of Applied Physics, 1974
- Critical approach distances and critical angles for channellingRadiation Effects, 1971