Electron Irradiation of Indium Arsenide

Abstract

The carrier concentration of $n$-type InAs increases during irradiation with 4.5-Mev electrons. The increase is followed to a carrier concentration of ${10}^{17}$/${\mathrm{cm}}^3$. The carrier concentration of $p$-type samples decreases with irradiation. The increase in the electron concentration suggests that bombardment-produced donors are at least doubly ionized, even when the Fermi level is in the conduction band. Initially $p$-type samples exhibited anomalies which may result from $n$-type conduction in the vicinity of dislocations.