p-n Junction characteristics and ultimate performances of high quality 8–14 μm Hg1−xCdxTe implanted photodetectors
- 31 January 1977
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 17 (1), 25-31
- https://doi.org/10.1016/0020-0891(77)90092-6
Abstract
No abstract availableKeywords
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