Hg-implanted Hg1−x Cdx Te infrared photovoltaic detectors in the 8- to 14-μm range
- 15 October 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (8), 448-449
- https://doi.org/10.1063/1.1654953
Abstract
p‐n junction photovoltaic detectors have been obtained by Hg implantation in Hg1−x Cdx Te for the 2‐ to 14‐μm band. High‐sensitivity photodiodes were achieved over the entire range quoted; the most interesting results are those concerning the 8‐ to 14‐μm range; peak detectivity better than 1010 cm Hz1/2 W−1, a zero‐bias resistance area product between 2.4–0.12 Ω cm2, spcific responsivity between 1.2 × 104 and 5 × 102 V W−1, and quantum efficiency between 65% and 45% were obtained.Keywords
This publication has 5 references indexed in Scilit:
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