Excitons, phonons, and interfaces in GaAs/AlAs quantum-well structures
- 16 September 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (12), 1547-1550
- https://doi.org/10.1103/physrevlett.67.1547
Abstract
We report photoluminescence and resonant-Raman-scattering studies of single GaAs/AlAs quantum-well structures. Splittings of the exciton peaks show that there is a large-scale island structure at the interfaces. Shifts in the absolute exciton energies of quantum wells grown at different substrate temperatures and also the form of the optical-phonon energies as a function of both mode index and quantum-well width indicate that there also exists a small-scale structure on the interfaces.Keywords
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