Interfaces in GaAs/AlAs quantum well structures
- 17 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25), 2710-2712
- https://doi.org/10.1063/1.103807
Abstract
We present a study of the bottom interface (GaAs on AlAs) in GaAs/AlAs single quantum wells using reflection high‐energy electron diffraction, luminescence, and luminescence excitation spectroscopy. The results indicate that it is possible to grow GaAs/AlAs quantum wells with two truly smooth interfaces using molecular beam epitaxy with growth interrupts. A set of samples in which the growth interrupt time on the bottom interface was changed illustrates in a systematic way the qualitative behavior possible in luminescence spectra. In particular, the energy splitting between the exciton peaks is observed to vary in the rough regime and in the truly smooth regime, although in a different way.Keywords
This publication has 12 references indexed in Scilit:
- Does luminescence show semiconductor interfaces to be atomically smooth?Applied Physics Letters, 1990
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989
- Current understanding of growth mechanisms in III–V MBEJournal of Crystal Growth, 1989
- Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxySuperlattices and Microstructures, 1988
- The effect of interface disorder on the eigenvalue spectrum of quantum well heterostructuresJournal of Vacuum Science & Technology B, 1988
- A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structuresJournal of Crystal Growth, 1987
- Atomistic models of interface structures of GaAs-Al Ga1−As (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBEJournal of Crystal Growth, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- High-resolution photoluminescence and reflection studies of GaAs-As multi-quantum-well structures grown by molecular-beam epitaxy: Determination of microscopic structural quality of interfacesPhysical Review B, 1986
- Biexcitons in GaAs quantum wellsPhysical Review B, 1982