Millimeter-wave low noise metamorphic HEMT amplifiers and devices on GaAs substrates
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 221-223
- https://doi.org/10.1109/gaas.1999.803762
Abstract
An excellent 0.61 dB minimum noise figure and 11.8 dB associated gain at 26 GHz, have been obtained for a InAlAs/InGaAs metamorphic HEMT on a GaAs substrate. Low-noise amplifiers show under 1.8 dB noise figure with gain greater than 24 dB across 27-32 GHz.Keywords
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