Lateral spread of 31P and 11B ions implanted in silicon

Abstract

The lateral spread of implanted ³¹P and ¹¹B ions into Si has been measured using ion implantation at oblique incidence and the C‐V method. Standard deviations of the lateral spread are 570 and 825 Å for 145‐keV and 260‐keV ³¹P ions, respectively, and 725 and 1100 Å for 80‐keV and 150‐keV ¹¹B ions, respectively. These results are in good agreement with the theoretical values in the literature.