Lateral spread of 31P and 11B ions implanted in silicon
- 1 September 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (9), 4220-4221
- https://doi.org/10.1063/1.1662924
Abstract
The lateral spread of implanted 31P and 11B ions into Si has been measured using ion implantation at oblique incidence and the C‐V method. Standard deviations of the lateral spread are 570 and 825 Å for 145‐keV and 260‐keV 31P ions, respectively, and 725 and 1100 Å for 80‐keV and 150‐keV 11B ions, respectively. These results are in good agreement with the theoretical values in the literature.Keywords
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