A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback Method
- 1 August 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (8R)
- https://doi.org/10.1143/jjap.25.1264
Abstract
For the purpose of introducing a current-confining structure to a GaAlAs/GaAs surface emitting (SE) laser, a circular buried heterostructure (CBH) was proposed. A selective meltback method was employed in order to avoid the oxidization of GaAlAs. The threshold current of an SE laser was 300 mA under a pulsed condition at room temperature. The nominal threshold current density was 20 kA/cm2/µm.Keywords
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