Enhanced interband recombination in Pb1−xSnxTe
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9), 3965-3968
- https://doi.org/10.1063/1.322146
Abstract
Photoconductive measurements have been performed on Pb1−xSnxTe in the small‐energy‐gap region. Experimentally observed shortening of the photoconductive lifetime is inferred to occur as a result of strong coupling of photoexcited carriers to some elementary excitations (phonon and phonon‐plasmon modes) in the material. Applications to fast infrared detectors are discussed.Keywords
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