Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
- 2 February 1987
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 81 (1-4), 153-158
- https://doi.org/10.1016/0022-0248(87)90383-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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