Thermal resistance and temperature distribution in double-heterostructure lasers: Calculations and experimental results
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (8), 812-817
- https://doi.org/10.1109/jqe.1979.1070079
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Interfacial recombination velocity in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1978
- Thermal-resistance models for proton-isolated double-heterostructure lasersIEE Journal on Solidstate and Electron Devices, 1978
- Low threshold current proton-isolated (GaAl)As double heterostructure lasersOptical and Quantum Electronics, 1977
- Linear Light Output Power Dependence on Effective Gain Width in Stripe Geometry (Al, Ga) As DH LasersJapanese Journal of Applied Physics, 1977
- Improved light-output linearity in stripe-geometry double-heterostructure (Al,Ga)As lasersApplied Physics Letters, 1976
- Temperature Distributions in the GaAs-AlGaAs Double-Heterostructure Laser below and above the Threshold CurrentJapanese Journal of Applied Physics, 1975
- A new technique for measuring the thermal impedance of junction lasersIEEE Journal of Quantum Electronics, 1975
- Reliability of DH GaAs lasers at elevated temperaturesApplied Physics Letters, 1975
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Geometrical properties of random particles and the extraction of photons from electroluminescent diodesJournal of Applied Physics, 1974