Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxy
- 1 January 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 99 (4), 391-397
- https://doi.org/10.1016/0040-6090(83)90066-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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